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Issue 45, 2010
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High performance n-type organic transistors based on a distyrylthiophene derivative

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Abstract

Organic field-effect transistors (OFETs) based on a distyryl-thiophene (DST) derivative, 3′-(thiophene-2,5-diyl)bis(2-(3,5-bis(trifluoromethyl)phenyl)acrylonitrile (THIO-Y), were fabricated. Attributed to strong intermolecular interactions, dense molecular packing and appropriate energy level, OFETs based on a single crystal and thin film of THIO-Y showed electron mobilities as high as 0.16 and 0.03 cm2 V−1s−1, respectively.

Graphical abstract: High performance n-type organic transistors based on a distyrylthiophene derivative

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Supplementary files

Article information


Submitted
12 Aug 2010
Accepted
01 Oct 2010
First published
20 Oct 2010

J. Mater. Chem., 2010,20, 10103-10106
Article type
Communication

High performance n-type organic transistors based on a distyrylthiophene derivative

J. H. Kim, J. W. Chung, Y. Jung, S. Yoon, B. An, H. S. Huh, S. W. Lee and S. Y. Park, J. Mater. Chem., 2010, 20, 10103
DOI: 10.1039/C0JM02646H

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