Issue 4, 2010
From the journal:

Journal of Materials Chemistry

Low-voltage pentacene transistor inverters using micro-contact printed nano-layer†

Kwang H. Lee,a   Min Suk Oh,b   Byoung H. Lee,c   Myung M. Sungc  and  Seongil Im*a  

* Corresponding authors

a Institute of Physics and Applied Physics, Yonsei University, Seoul, Republic of Korea
E-mail: semicon@yonsei.ac.kr
Fax: +82-2-392-1592
Tel: +82-2-2123-2842

b Korea Electronics Technology Institute (KETI), Seongnam, Republic of Korea

c Department of Chemistry, Hanyang University, Seoul, Republic of Korea

Abstract

We report on low-voltage inverters with two pentacene-based thin-film transistors (TFTs), one of which has been fabricated on a dielectric surface selected by micro-contact printing (μCP). When a self-assembled monolayer (SAM) of 7-octenyltrichlorosilane (7-OTS) was printed on AlOx dielectric oxide, the TFT with the μCP-SAM displayed a large threshold voltage (Vth) shift (3 V shift under −5 V operation), increased device current, and clearly changed pentacene surface morphology as compared to those of the other TFT without μCP-SAM. Those results are attributed to the 7-OTS-modified pentacene/AlOx interface. Our inverter, composed of two TFTs with and without μCP-SAM, shows a high gain of ∼50 at a supply voltage (VDD) of −20 V.

Graphical abstract: Low-voltage pentacene transistor inverters using micro-contact printed nano-layer

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Article information

DOI
https://doi.org/10.1039/B922675C
Article type
Communication
Submitted
02 Nov 2009
Accepted
21 Nov 2009
First published
04 Dec 2009

J. Mater. Chem., 2010,20, 663-665

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Low-voltage pentacene transistor inverters using micro-contact printed nano-layer

K. H. Lee, M. S. Oh, B. H. Lee, M. M. Sung and S. Im, J. Mater. Chem., 2010, 20, 663 DOI: 10.1039/B922675C

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