Issue 3, 2010

Transverse electric field modulated tunneling magnetoresistance in a DNA molecular device

Abstract

Quantum spin-dependent transport in a ferromagnetic(FM)/DNA/ferromagnetic(FM) device is theoretically investigated based on the lattice Green function method and the Landauer–Büttiker theory. The effect of a transverse electric field on magnetoresistance (MR) of the device is investigated. It is predicted that either the direction or strength of the transverse electric field can change the MR of the device. We suggest a possible application of modulating MR of the FM/DNA/FM device by a transverse electric field.

Graphical abstract: Transverse electric field modulated tunneling magnetoresistance in a DNA molecular device

Article information

Article type
Paper
Submitted
18 Aug 2009
Accepted
21 Oct 2009
First published
16 Nov 2009

Phys. Chem. Chem. Phys., 2010,12, 578-582

Transverse electric field modulated tunneling magnetoresistance in a DNA molecular device

D. Kang, Z. Qu, H. Jiang and S. Xie, Phys. Chem. Chem. Phys., 2010, 12, 578 DOI: 10.1039/B917050B

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