Growth of epitaxial zirconium-doped indium oxide (222) at low temperature by rf sputtering
Abstract
Zr-doped In2O3 (Zr-In2O3) (222) epitaxial layers of thickness 210 nm were grown on yttria-stabilized
* Corresponding authors
a
Institute of Materials Engineering, National Taiwan Ocean University, Keelung, Taiwan
E-mail:
hylee@nsrrc.org.tw, deanvera@yahoo.com.tw
b National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu Science Park, Taiwan
c Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan
Zr-doped In2O3 (Zr-In2O3) (222) epitaxial layers of thickness 210 nm were grown on yttria-stabilized
Y. Liang and H. Lee, CrystEngComm, 2010, 12, 3172 DOI: 10.1039/C004452K
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