Deposition of uniform μc-Si : H layers on plasma etched vertical ZnOnanowires

Abstract

This study introduces the deposition of μc-Si : H layers on vertically well-aligned ZnO nanowires by very high frequency (VHF) plasma enhanced chemical vapor deposition (PECVD). It was found that μc-Si : H deposited on un-etched ZnO nanowires, with a high length-to-diameter aspect ratio, were nail-shaped due to the rapid growth of μc-Si : H along the lateral (0002) plane. By slightly etching the ZnO nanowires prior to μc-Si : H deposition, μc-Si : H films were coated uniformly on the surface of ZnO nanowires. The ZnO nanowires uniformly coated by plasma etching are potentially useful not only for solar cell applications but also for any nanodevice that uses nanowires as a nanoelectrode.