Issue 4, 2010

The synthesis and mechanism investigations of morphology controllable 1-D SiCnanostructuresvia a novel approach

Abstract

Single crystalline one-dimensional (1-D) β-SiC nanostructures were synthesized by the CVD (chemical vapor deposition) method using single crystal silicon wafers and detonation soot as the raw materials. The phase, morphology, crystal structure, and defects of the products were characterized by X-ray diffraction, field emission scanning electron microscopy, and transmission electron microscopy. Within a 2 h reaction time, the morphology of the SiC nanostructures can be tuned to nanowires, hexagonal columns and nanopyramids by simply altering the reaction temperature from 1250 °C, 1300 °C to 1350 °C, respectively. Based on the VLS mechanism, we propose a model to explain the novel behavior of the temperature-dependent morphology considering the relationships between catalytic droplets and nucleation.

Graphical abstract: The synthesis and mechanism investigations of morphology controllable 1-D SiC nanostructures via a novel approach

Article information

Article type
Paper
Submitted
30 Mar 2009
Accepted
10 Nov 2009
First published
01 Dec 2009

CrystEngComm, 2010,12, 1134-1138

The synthesis and mechanism investigations of morphology controllable 1-D SiC nanostructures via a novel approach

Y. Sun, H. Cui, G. Z. Yang, H. Huang, D. Jiang and C. X. Wang, CrystEngComm, 2010, 12, 1134 DOI: 10.1039/B906171A

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