Issue 2, 2010
From the journal:

CrystEngComm

Development of CdZnTe doped with Bi for gamma radiation detection

V. Carcelén,*a   J. Rodríguez-Fernández,a   N. Vijayan,ab   P. Hidalgo,c   J. Piqueras,c   N. V. Sochinskii,d   J. M. Pereze  and  E. Diégueza  

* Corresponding authors

a Laboratorio de Crecimiento de Cristales, Dpto. Física de Materiales, Facultad de Ciencias. Univ. Autónoma de Madrid, Cantoblanco, Spain
E-mail: veronica.carcelen@uam.es
Fax: +34- 914978579

b National Physical Laboratory, New Delhi, India

c Dpto. Física de Materiales, Facultad de Ciencias Físicas, Univ. Complutense de Madrid, Madrid, Spain

d Instituto de Microelectrónica de Madrid, CNM-CSIC, Polo Tecnológico de Madrid, Tres Cantos, Madrid, Spain

e Laboratorio General de Electrónica y Automática, CIEMAT, Edificio 22, Avenida Complutense, 22, Madrid, Spain

Abstract

Bulk CZT crystals doped with Bi (1 × 1019 at/cm3) have been grown by the Oscillatory Bridgman method, the growth velocity and the zinc concentration profile being improved by the insertion of a Pt tube acting as a cold finger. The stoichiometric uniformity was examined by energy dispersive X-ray analysis, and the zinc concentration was confirmed by inductively coupled plasma mass spectroscopy and cathodoluminescence measurements. The resistivity value was in the range of 8 × 108 Ω cm, being smaller for the passivated sample, which at the same time had counter device properties.

Graphical abstract: Development of CdZnTe doped with Bi for gamma radiation detection

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Article information

DOI
https://doi.org/10.1039/B905810A
Article type
Paper
Submitted
23 Mar 2009
Accepted
14 Sep 2009
First published
28 Sep 2009

CrystEngComm, 2010,12, 507-510

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Development of CdZnTe doped with Bi for gamma radiation detection

V. Carcelén, J. Rodríguez-Fernández, N. Vijayan, P. Hidalgo, J. Piqueras, N. V. Sochinskii, J. M. Perez and E. Diéguez, CrystEngComm, 2010, 12, 507 DOI: 10.1039/B905810A

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