Polyhedral oligomeric silsesquioxane nanocomposites exhibiting ultra-low dielectric constants through POSS orientation into lamellar structures

Abstract

Polyhedral oligomeric silsesquioxane (POSS) nanocomposite, which is prepared from two liquid monomers and can be processed under the “spinning on” process, exhibits an ultra-low dielectric constant (k) of 1.47. The ultra-low k value of the POSS nanocomposite material is attributed to the formation of a POSS lamellar structure. The nanocomposite material also shows good thermal stability, high glass transition temperature, and re-workable characteristics, warranting its high potential for uses in modern and future microelectronics.