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Issue 7, 2009
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Long range epitaxial growth of prismatic heterostructures on the facets of catalyst-free GaAs nanowires†

Matthias Heigoldt,‡a   Jordi Arbiol,‡*b   Danče Spirkoska,a   Josep M. Rebled,c   Sònia Conesa-Boj,c   Gerhard Abstreiter,a   Francesca Peiró,c   Joan R. Morantece  and  Anna Fontcuberta i Morral*ad  
Author affiliations

* Corresponding authors

a Walter Schottky Institute, Technical University of Munich, Am Coulombwall 3, Garching, Germany

b TEM-MAT, Serveis Cientificotecnics, Universitat de Barcelona, C/. Lluis Sole i Sabaris 1–3, 08028 Barcelona, CAT, Spain
E-mail: arbiol@ub.edu
Web: http://nun97.el.ub.es/%E2%88%BCarbiol

c EME/XaRMAE/IN2UB, Dept. d'Electrònica, Universitat de Barcelona, C/. Marti i Franques 1, 08028 Barcelona, CAT, Spain

d Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
E-mail: anna.fontcuberta-morral@epfl.ch

e IREC, Catalonia Institute for Energy Research, Josep Pla 2, 08019 Barcelona, CAT, Spain

Abstract

Molecular beam epitaxy is used for the synthesis of catalyst-free GaAs nanowires and related quantum heterostructures. After growth of the nanowire GaAs core, the conditions are changed in situ towards standard MBE planar growth in order to obtain quantum heterostructures on the facets of the nanowires. Depending on the nanowire orientation, different geometries of the quantum heterostructures are obtained. This growth method is fully characterized by high resolution and scanning transmission electron microscopy and Z-contrast electron tomography. The growth conditions are also tuned for the optimization and homogeneity of the optical properties. The feedback of these analyses allows the tuning of the growth conditions according to the required optical properties. This work is the basis for obtaining a new generation of devices based on the heterostructures existing on the nanowire facets.

Graphical abstract: Long range epitaxial growth of prismatic heterostructures on the facets of catalyst-free GaAs nanowires

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Publication details

The article was received on 22 Sep 2008, accepted on 12 Nov 2008 and first published on 06 Jan 2009


Article type: Feature Article
DOI: 10.1039/B816585H
J. Mater. Chem., 2009,19, 840-848

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    Long range epitaxial growth of prismatic heterostructures on the facets of catalyst-free GaAs nanowires

    M. Heigoldt, J. Arbiol, D. Spirkoska, J. M. Rebled, S. Conesa-Boj, G. Abstreiter, F. Peiró, J. R. Morante and A. Fontcuberta i Morral, J. Mater. Chem., 2009, 19, 840
    DOI: 10.1039/B816585H

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