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Issue 42, 2009
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π-σ-Phosphonic acid organic monolayer–amorphous sol–gel hafnium oxide hybrid dielectric for low-voltage organic transistors on plastic

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Abstract

A vacuum-free solution processed hybrid dielectric composed of an anthryl-alkyl-phosphonic acid (π-σ-PA) self-assembled monolayer on an amorphous sol–gel processed hafnium oxide (HfOx) is demonstrated for low-voltage organic thin film transistors (OTFTs) on plastic substrates. The π-σ-PA/HfOx hybrid dielectric provides high capacitance (0.54 µF cm−2) and low leakage current (2 × 10−8 A cm−2), and has a chemically and electrically compatible dielectric interface for evaporated and solution processed acene semiconductors. The utility of this dielectric is demonstrated by fabricating pentacene and 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-PEN) based OTFTs with operating voltages under 2 V, subthreshold slopes as low as 100 mV dec−1, and average mobilities of 0.32 cm2 V−1 s−1 and 0.38 cm2 V−1 s−1, for pentacene and TIPS-PEN, respectively.

Graphical abstract: π-σ-Phosphonic acid organic monolayer–amorphous sol–gel hafnium oxide hybrid dielectric for low-voltage organic transistors on plastic

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Publication details

The article was received on 13 May 2009, accepted on 09 Jul 2009 and first published on 07 Sep 2009


Article type: Paper
DOI: 10.1039/B909484A
Citation: J. Mater. Chem., 2009,19, 7929-7936

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    π-σ-Phosphonic acid organic monolayer–amorphous sol–gel hafnium oxide hybrid dielectric for low-voltage organic transistors on plastic

    O. Acton, G. G. Ting II, H. Ma, D. Hutchins, Y. Wang, B. Purushothaman, J. E. Anthony and A. K.-Y. Jen, J. Mater. Chem., 2009, 19, 7929
    DOI: 10.1039/B909484A

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