ZrO2–In2O3 thin layers with gradual ionic to electronic composition synthesized by atomic layer deposition for SOFC applications
Abstract
To achieve the processing of high performance solid
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* Corresponding authors
a
Laboratoire d'Electrochimie et de Chimie Analytique, UMR 7575 CNRS, ENSCP, Paris6, 11 rue Pierre et Marie Curie, F-75231 Paris Cedex 05, France
E-mail:
michel-cassir@enscp.fr
Fax: +33-1-44276750
Tel: +33-1-55426387
b Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology (TKK), FI-02015 Espoo, Finland
To achieve the processing of high performance solid
C. Brahim, F. Chauveau, A. Ringuedé, M. Cassir, M. Putkonen and L. Niinistö, J. Mater. Chem., 2009, 19, 760 DOI: 10.1039/B813001A
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