A model for the response towards oxidizing gases of photoactivated sensors based on individual SnO2nanowires
Abstract
The paper presents a quantitative model to elucidate the role of impinging
* Corresponding authors
a
EME/XaRMAE/IN2UB, Departament d’Electrònica, Universitat de Barcelona, C/ Martí i Franquès 1, Planta 2, E-08028 Barcelona, Spain
E-mail:
dprades@el.ub.es
b
Electronic Nanosystems S. L., Barcelona, Spain
E-mail:
fhernandezra@e-nanos.com
c Department of Inorganic Chemistry, University of Cologne, D-50939 Cologne, Germany
d Nanocrystalline Materials and Thin Film Systems, Leibniz-Institute of New Materials, D-66123 Saarbruecken, Germany
e
Institut de Recerca en Energia de Catalunya (IREC), C/ Josep Pla 2, B2, Ground Floor, E-08019 Barcelona, Spain
E-mail:
jrmorante@irec.cat
The paper presents a quantitative model to elucidate the role of impinging
J. D. Prades, R. Jimenez-Diaz, M. Manzanares, F. Hernandez-Ramirez, A. Cirera, A. Romano-Rodriguez, S. Mathur and J. R. Morante, Phys. Chem. Chem. Phys., 2009, 11, 10881 DOI: 10.1039/B915646A
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