Issue 17, 2009
From the journal:

Physical Chemistry Chemical Physics

Chemical and electronic properties of the ITO/Al2O3 interface

Yvonne Gassenbauer,a   André Wachaua  and  Andreas Klein*a  

* Corresponding authors

a Institute of Materials Science, Surface Science Division, Darmstadt University of Technology, Darmstadt, Germany
E-mail: aklein@surface.tu-darmstadt.de

Abstract

The interface formation between transparent conducting Sn-doped indium oxide (ITO) and dielectric aluminium oxide has been studied by photoelectron spectroscopy using in situ sample preparation by magnetron sputtering. The electronic structure including band alignment, changes in Fermi level position and work function is determined. The changes of Fermi level are related to the deposition technique used.

Graphical abstract: Chemical and electronic properties of the ITO/Al2O3 interface

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Article information

DOI
https://doi.org/10.1039/B822848E
Article type
Paper
Submitted
19 Dec 2008
Accepted
17 Feb 2009
First published
11 Mar 2009

Phys. Chem. Chem. Phys., 2009,11, 3049-3054

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Chemical and electronic properties of the ITO/Al2O3 interface

Y. Gassenbauer, A. Wachau and A. Klein, Phys. Chem. Chem. Phys., 2009, 11, 3049 DOI: 10.1039/B822848E

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