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Issue 6, 2009
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Atomic ordering of AlInP grown by MOVPE at different temperatures in pure ambient N2

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Abstract

High quality AlInP epilayers have been grown by metal–organic vapor phase epitaxy (MOVPE) on GaAs substrates at different growth temperatures. CuPt-B type spontaneous atomic ordering of the epilayers has been characterized by using high resolution X-ray diffraction and low temperature photoluminescence measurement. The effect of the growth temperature on the atomic ordering of the grown AlInP epilayer has been investigated. It is observed that the ordering degree of the AlInP epilayer grown at 630 °C is higher than that of the samples grown at other temperatures. Transmission electron diffraction (TED) measurement shows no CuPt-A type ordering in the epilayers. The CuPt-B type ordering degree of the AlInP epilayer increases with the growth temperature at the low growth temperature range which is mainly attributed to the more phosphorus (P) dimers formed on the growth surface during the epitaxial growth. Within the high growth temperature range, the greater material growth rate at the higher growth temperature causes the reduction of the epilayer's CuPt-B type ordering.

Graphical abstract: Atomic ordering of AlInP grown by MOVPE at different temperatures in pure ambient N2

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Publication details

The article was received on 29 Sep 2008, accepted on 20 Jan 2009 and first published on 10 Feb 2009


Article type: Paper
DOI: 10.1039/B817012F
Citation: CrystEngComm, 2009,11, 1068-1072
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    Atomic ordering of AlInP grown by MOVPE at different temperatures in pure ambient N2

    Z. Jinghua, T. Xiaohong and T. Jinghua, CrystEngComm, 2009, 11, 1068
    DOI: 10.1039/B817012F

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