Issue 40, 2009

Fabrication of TaS2 nanobelt arrays and their enhanced field-emission

Abstract

Crystal TaS2 nanobelt arrays were fabricated on Ta wafers by a two-step method. Field-emission measurements show that the nanobelt arrays are decent field emitters with a turn-on field of ∼0.7 V μm−1, a threshold field of ∼2.1 V μm−1, and a field enhancement factor of ∼4.33 × 104.

Graphical abstract: Fabrication of TaS2 nanobelt arrays and their enhanced field-emission

Supplementary files

Article information

Article type
Communication
Submitted
13 Jul 2009
Accepted
28 Aug 2009
First published
11 Sep 2009

Chem. Commun., 2009, 6008-6010

Fabrication of TaS2 nanobelt arrays and their enhanced field-emission

X. Wu, Y. Tao and Q. Gao, Chem. Commun., 2009, 6008 DOI: 10.1039/B913935D

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements