Issue 30, 2009
From the journal:

Chemical Communications

Room temperature fabrication of ZnO nanorod films: synthesis and application as a channel layer of transparent thin film transistors†

Ji-Young Oh,ab   Jonghyurk Park,b   Seung-Youl Kang,b   Chi-Sun Hwangb  and  Hong-Ku Shim*a  

* Corresponding authors

a Department of Chemistry and School of Molecular Science, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea
E-mail: hkshim@kaist.ac.kr

b IT Convergence and Components & Material Research Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Republic of Korea

Abstract

We report a single-step, solution-based synthesis even at room temperature utilizing a facile sonochemical method to fabricate ZnO nanocrystalline films consisting of well-aligned nanorods.

Graphical abstract: Room temperature fabrication of ZnO nanorod films: synthesis and application as a channel layer of transparent thin film transistors

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Article information

DOI
https://doi.org/10.1039/B908219K
Article type
Communication
Submitted
24 Apr 2009
Accepted
02 Jun 2009
First published
18 Jun 2009

Chem. Commun., 2009, 4545-4547

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Room temperature fabrication of ZnO nanorod films: synthesis and application as a channel layer of transparent thin film transistors

J. Oh, J. Park, S. Kang, C. Hwang and H. Shim, Chem. Commun., 2009, 4545 DOI: 10.1039/B908219K

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