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Issue 35, 2008
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Contact resistance and electrode material dependence of air-stable n-channel organic field-effect transistors using dimethyldicyanoquinonediimine (DMDCNQI)

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Abstract

N-channel organic field-effect transistors with stable performance at ambient conditions are fabricated on the basis of an electron-accepting molecule, dimethyldicyanoquinone diimine (DMDCNQI). The transistors are investigated by varying source and drain electrode materials: Au, Ag, Cu, and a highly conducting organic charge-transfer salt, (tetrathiafulvalene)(tetracyanoquinodimethane) [(TTF)(TCNQ)]. The devices with the Au electrode show lowest contact resistance and highest electron mobility (0.011 cm2V−1 s−1 for bottom-contact configuration), and the performance decreases in the order of Au > (TTF)(TCNQ) > Ag > Cu. This order does not seem related to the metal work functions, but is attributed to the organic–metal interfacial potentials. DMDCNQI forms highly conducting charge-transfer complexes with Ag and Cu, but the complex layer increases the interfacial potential as well as the electron-injection barrier and also increases the off-current for short channel devices. The air stability is not determined solely by the organic semiconductor but is considerably influenced by the electrode materials.

Graphical abstract: Contact resistance and electrode material dependence of air-stable n-channel organic field-effect transistors using dimethyldicyanoquinonediimine (DMDCNQI)

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Publication details

The article was received on 19 May 2008, accepted on 03 Jul 2008 and first published on 01 Aug 2008


Article type: Paper
DOI: 10.1039/B808435A
Citation: J. Mater. Chem., 2008,18, 4165-4171

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    Contact resistance and electrode material dependence of air-stable n-channel organic field-effect transistors using dimethyldicyanoquinonediimine (DMDCNQI)

    H. Wada, K. Shibata, Y. Bando and T. Mori, J. Mater. Chem., 2008, 18, 4165
    DOI: 10.1039/B808435A

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