Synthesis of high quality p-type Zn3P2nanowires and their application in MISFETs

Abstract

Single-crystalline Zn₃P₂nanowires (NWs) have been synthesized on silicon (Si) substrates via a vapor phase transport method. Zn (99.99%) powder and InP (99.99%) fragments were used as the sources, and 10 nm thick thermal evaporated gold (Au) film was used as the catalyst. The as-prepared Zn₃P₂ NWs have diameters of 100–200 nm and lengths of more than 10 μm. Single NW metal–insulator–semiconductor field-effect transistors (MISFETs) based on Zn₃P₂ NWs were fabricated. Electrical transport measurements show that the as-grown Zn₃P₂ NWs are of p-type. The hole concentrations and mobilities of the p-type Zn₃P₂ NWs are about 5.6 × 10¹⁶ cm⁻³ and 42.5 cm²V⁻¹ s⁻¹, respectively. The on–off ratio of the MISFET is about 4 × 10⁴, and its threshold voltage and transconductance are 2.5 V and 35 nS, respectively. These parameters indicate that the p-type Zn₃P₂ NWs are of high quality, and may have potential applications in nanoscale electronic and optoelectronic devices.