High performance organic field-effect transistors based on [2,2′]bi[naphtho[2,3-b]thiophenyl] with a simple structure

Abstract

A novel semiconductor with naphtho[2,3-b]thiophene rings was synthesized and characterized by using single crystal X-ray structure analysis, absorption and emission spectra, electrochemical measurements, quantum chemical calculations, thin-film X-ray diffraction and AFM studies. FET devices using the molecule as the active layer showed high mobilities and high air stability. The hole mobility was enhanced to 0.67 cm²V⁻¹ s⁻¹ in air.