Accurate determinations of Ge atom fractions in SiGe semiconductor chips using high performance ICP-OES
Abstract
The Ge atom fractions in SiGe chips with nominal values in the range 3.5% to 14% were accurately determined using high performance
* Corresponding authors
a
Analytical Chemistry Division, National Institute of Standards and Technology, Gaithersburg, USA
E-mail:
savelas.rabb@nist.gov
The Ge atom fractions in SiGe chips with nominal values in the range 3.5% to 14% were accurately determined using high performance
S. A. Rabb, M. R. Winchester and L. L. Yu, J. Anal. At. Spectrom., 2008, 23, 550 DOI: 10.1039/B715148A
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