Defect-pit-assisted growth of GaN nanostructures: nanowires, nanorods and nanobelts
Abstract
A new method using defect-pit-assisted growth technology to successfully synthesize the high-quality single crystalline GaN
* Corresponding authors
a
SOI Group, Institute of Microelectronics, Peking University, Beijing, China
E-mail:
xueshoubin-pku@163.com
Fax: +86 10 62757761
Tel: +86 10 62752546-806
b Institute of Semiconductors, Shandong Normal University, Ji'nan, China
A new method using defect-pit-assisted growth technology to successfully synthesize the high-quality single crystalline GaN
S. Xue, X. Zhang, R. Huang, H. Zhuang and C. Xue, Dalton Trans., 2008, 4296 DOI: 10.1039/B804943B
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