A novel air-stable n-type organic semiconductor: 4,4′-bis[(6,6′-diphenyl)-2,2-difluoro-1,3,2-dioxaborine] and its application in organic ambipolar field-effect transistors
Abstract
Novel air-stable n-type organic field-effect transistors based on 4,4′-bis[(6,6′-diphenyl)-2,2-difluoro-1,3,2-dioxaborine] (DOB) have been fabricated. The devices exhibit a filed-effect mobility of 1 × 10−4 cm2 V−1 s−1, an on/off ratio of 104 and a threshold voltage of 8.6 V at room temperature under ambient conditions. Moreover, ambipolar organic field-effect transistors based on DOB and