Issue 3, 2006
From the journal:

Journal of Materials Chemistry

La2S3 thin films from metal organic chemical vapor deposition of single-source precursor

Lu Tian,a   Ti Ouyang,a   Kian Ping Loh*a  and  Jagadese J. Vittal*a  

* Corresponding authors

a Department of Chemistry, National University of Singapore, Singapore
E-mail: chmlohkp@nus.edu.sg, chmjjv@nus.edu.sg

Abstract

Thin films of lanthanum sulfide (La2S3) have been prepared from [La(bipy)(S2CNEt2)3] by using metal organic chemical vapor deposition (MOCVD) on different substrates. The preparative parameters, such as substrate temperature and the nature of substrates, are optimized to get well-defined cubic phase (γ) lanthanum sulfide thin films. The optimized films are characterized by means of X-ray powder diffraction (XRPD) techniques, scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM) and in-situ X-ray photoelectron spectroscopy (XPS).

Graphical abstract: La2S3 thin films from metal organic chemical vapor deposition of single-source precursor

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Article information

DOI
https://doi.org/10.1039/B511981B
Article type
Paper
Submitted
23 Aug 2005
Accepted
17 Oct 2005
First published
03 Nov 2005

J. Mater. Chem., 2006,16, 272-277

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La2S3 thin films from metal organic chemical vapor deposition of single-source precursor

L. Tian, T. Ouyang, K. P. Loh and J. J. Vittal, J. Mater. Chem., 2006, 16, 272 DOI: 10.1039/B511981B

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