Issue 15, 2006

Anomalous roughness evolution of rubrene thin films observed in real time during growth

Abstract

We study the growth and structure of thin films of the organic semiconductor rubrene during organic molecular beam deposition (OMBD) on silicon oxide in situ and in real time using X-ray scattering. Using in situ grazing incidence diffraction (GID) we find a small degree of local order but an otherwise largely disordered structure, consistent with out of plane scans. Monitoring the surface morphology in real time during growth, we find relatively smooth films (surface roughness σ below ∼15 Å for thicknesses up to at least 600 Å) and a significant delay before the onset of roughening. This anomalous roughening in the beginning and crossover to normal roughening later during growth may be related to conformational changes of rubrene in the early stages of growth.

Graphical abstract: Anomalous roughness evolution of rubrene thin films observed in real time during growth

Article information

Article type
Paper
Submitted
16 Dec 2005
Accepted
08 Feb 2006
First published
23 Feb 2006

Phys. Chem. Chem. Phys., 2006,8, 1834-1836

Anomalous roughness evolution of rubrene thin films observed in real time during growth

S. Kowarik, A. Gerlach, S. Sellner, F. Schreiber, J. Pflaum, L. Cavalcanti and O. Konovalov, Phys. Chem. Chem. Phys., 2006, 8, 1834 DOI: 10.1039/B517866E

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