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Issue 22, 2005
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A simple single-source precursor route to the nanostructures of AlN, GaN and InN

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Abstract

In an effort to find a simple and common single-source precursor route for the group 13 metal nitride semiconductor nanostructures, the complexes formed by the trichlorides of Al, Ga and In with urea have been investigated. The complexes, characterized by X-ray crystallography and other techniques, yield the nitrides on thermal decomposition. Single crystalline nanowires of AlN, GaN and InN have been deposited on Si substrates covered with Au islands by using the complexes as precursors. The urea complexes yield single crystalline nanocrystals under solvothermal conditions. The successful synthesis of the nanowires and nanocrystals of these three important nitrides by a simple single-precursor route is noteworthy and the method may indeed be useful in practice.

Graphical abstract: A simple single-source precursor route to the nanostructures of AlN, GaN and InN

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Publication details

The article was received on 03 Mar 2005, accepted on 30 Mar 2005 and first published on 13 Apr 2005


Article type: Communication
DOI: 10.1039/B502887F
Citation: J. Mater. Chem., 2005,15, 2175-2177

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    A simple single-source precursor route to the nanostructures of AlN, GaN and InN

    K. Sardar, M. Dan, B. Schwenzer and C. N. R. Rao, J. Mater. Chem., 2005, 15, 2175
    DOI: 10.1039/B502887F

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