Growth of polycrystalline GeTe films on Pb1 – xSnxTe (x = 0, 0.05 or 0.2) and BaF2 substrates

Vladimir I. Shtanov; Tatiana B. Shatalova; Lada V. Yashina; Robert Ts. Bondokov; Igor V. Saunin

doi:10.1070/MC2004v014n04ABEH001950

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Growth of polycrystalline GeTe films on Pb_{1 – x}Sn_xTe (x = 0, 0.05 or 0.2) and BaF₂ substrates

Vladimir I. Shtanov,^a Tatiana B. Shatalova,^a Lada V. Yashina,^a Robert Ts. Bondokov^b and Igor V. Saunin^b

Author affiliations

^a Department of Chemistry, M.V. Lomonosov Moscow State University, Moscow, Russian Federation, Leninskie Gory, Moscow, Russian Federation

^b St. Petersburg Electrotechnical University, St. Petersburg, Russian Federation, 5 ul. Professora Popova, St.Petersburg, Russian Federation

Abstract

Phase composition, microstructure and orientation were investigated for GeTe films grown on BaF₂ and Pb_{1 – x}Sn_xTe (x = 0, 0.05 or 0.2) substrates by hot wall epitaxy.

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DOI: https://doi.org/10.1070/MC2004v014n04ABEH001950
Article type: Communication
Submitted: 01 Jun 2004

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Mendeleev Commun., 2004,14, 136-137

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Growth of polycrystalline GeTe films on Pb_{1 – x}Sn_xTe (x = 0, 0.05 or 0.2) and BaF₂ substrates

V. I. Shtanov, T. B. Shatalova, L. V. Yashina, R. Ts. Bondokov and I. V. Saunin, Mendeleev Commun., 2004, 14, 136 DOI: 10.1070/MC2004v014n04ABEH001950

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Mendeleev Communications

Growth of polycrystalline GeTe films on Pb_{1 – x}Sn_xTe (x = 0, 0.05 or 0.2) and BaF₂ substrates

Abstract

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Growth of polycrystalline GeTe films on Pb_{1 – x}Sn_xTe (x = 0, 0.05 or 0.2) and BaF₂ substrates

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