Dual-source chemical vapour deposition of titanium sulfide thin films from tetrakisdimethylamidotitanium and sulfur precursors

Abstract

The dual-source atmospheric pressure chemical vapour deposition (APCVD) of TiS₂ thin films from [Ti(NMe₂)₄] and Bu^tSH is presented. Deposition took place at low temperatures (175–500 °C) and nitrogen and carbon contamination of the films was negligible. The APCVD reaction of [Ti(NMe₂)₄] and Bu^t₂S₂ resulted in the formation of a TiS₂ film at 600 °C but at 300–550 °C films with a Ti:S ratio of 1:1 by EDXA were produced. In contrast, films produced from [Ti(NMe₂)₄] and S(SiMe₃)₂ at 350–600 °C contained little sulfur (TiS_0.1–0.3) but large amounts of nitrogen and carbon indicating that titanium carbonitride (TiC_0.5N_0.5) had formed. The films were characterised by EDXA, SEM, XPS and Raman spectroscopy.