MOCVD of TiO2 thin films and studies on the nature of molecular mechanisms involved in the decomposition of [Ti(OPri)2(tbaoac)2]†
Abstract
A tailored precursor namely bis(isopropoxy)bis(tert-butylacetoacetato)titanium [Ti(OPri)2(tbaoac)2] was developed which showed good promise for depositing TiO2 thin films at reduced substrate temperatures compared to [Ti(OPri)2(thd)2]. Uniform films with high growth rates (∼10 nm min−1) and lower surface roughness (<2 nm) were obtained on SiOx/Si and Pt/ZrOx/SiOx/Si substrates. Electrical properties of the films on Si substrates were studied and lowest equivalent
- This article is part of the themed collection: From Molecules to Materials: Materials Discussion 7