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Issue 21, 2004
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MOCVD of TiO2 thin films and studies on the nature of molecular mechanisms involved in the decomposition of [Ti(OPri)2(tbaoac)2]

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Abstract

A tailored precursor namely bis(isopropoxy)bis(tert-butylacetoacetato)titanium [Ti(OPri)2(tbaoac)2] was developed which showed good promise for depositing TiO2 thin films at reduced substrate temperatures compared to [Ti(OPri)2(thd)2]. Uniform films with high growth rates (∼10 nm min−1) and lower surface roughness (<2 nm) were obtained on SiOx/Si and Pt/ZrOx/SiOx/Si substrates. Electrical properties of the films on Si substrates were studied and lowest equivalent oxide thickness (EOT) was around 2 nm and anatase phase had a dielectric constant around 40. A study on the thermolysis behaviour of [Ti(OPri)2(tbaoac)2] was carried out using matrix-isolation FTIR spectroscopy, to understand the mechanistic details of its thermal decomposition. It was found that the decomposition takes place by the formation of ketene intermediates.

Graphical abstract: MOCVD of TiO2 thin films and studies on the nature of molecular mechanisms involved in the decomposition of [Ti(OPri)2(tbaoac)2]

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Article information


Submitted
20 Apr 2004
Accepted
10 Jun 2004
First published
28 Sep 2004

J. Mater. Chem., 2004,14, 3231-3238
Article type
Paper

MOCVD of TiO2 thin films and studies on the nature of molecular mechanisms involved in the decomposition of [Ti(OPri)2(tbaoac)2]

R. Bhakta, R. Thomas, F. Hipler, H. F. Bettinger, J. Müller, P. Ehrhart and A. Devi, J. Mater. Chem., 2004, 14, 3231
DOI: 10.1039/B405963H

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