Issue 8, 2004
From the journal:

Chemical Communications

Electrochemical lithography: fabrication of nanoscale Si tips by porous anodization of Al/Si wafer†

L. Pu,*a   Y. Shi,a   J. M. Zhu,a   X. M. Bao,a   R. Zhanga  and  Y. D. Zhenga  

* Corresponding authors

a Department of Physics, Nanjing University, Nanjing 210093, China
E-mail: pulin@nju.edu.cn
Fax: +86/25-83595535
Tel: +86/25-83685433

Abstract

Porous anodization of Al/Si wafer in sulfuric acid results in the formation of Si nanotips on the surface of Si substrate with ultrahigh packing density.

Graphical abstract: Electrochemical lithography: fabrication of nanoscale Si tips by porous anodization of Al/Si wafer

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Article information

DOI
https://doi.org/10.1039/B315810A
Article type
Communication
Submitted
11 Dec 2003
Accepted
26 Feb 2004
First published
18 Mar 2004

Chem. Commun., 2004, 942-943

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Electrochemical lithography: fabrication of nanoscale Si tips by porous anodization of Al/Si wafer

L. Pu, Y. Shi, J. M. Zhu, X. M. Bao, R. Zhang and Y. D. Zheng, Chem. Commun., 2004, 942 DOI: 10.1039/B315810A

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