Issue 2, 2003

Direct synthesis of aligned silicon carbide nanowires from the silicon substrates

Abstract

Aligned silicon carbide nanowires were synthesized directly from the silicon substrates via a novel catalytic reaction with a methane–hydrogen mixture at 1100 °C, with a mean diameter of 40 nm and length of 500 μm; they consist of a single-crystalline zinc blende structure crystal in the [111] growth direction; X-ray diffraction, Raman, and infrared spectroscopy confirm the synthesis of high-purity silicon carbide nanowires.

Graphical abstract: Direct synthesis of aligned silicon carbide nanowires from the silicon substrates

Article information

Article type
Communication
Submitted
14 Oct 2002
Accepted
27 Nov 2002
First published
20 Dec 2002

Chem. Commun., 2003, 256-257

Direct synthesis of aligned silicon carbide nanowires from the silicon substrates

H. Young Kim, J. Park and H. Yang, Chem. Commun., 2003, 256 DOI: 10.1039/B210027D

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