Abstract

Preparation of InN thin films has been examined using an atmospheric pressure halide chemical vapor deposition technique. It was found that the quality of the InN pillar crystal film grown on a Si(100) substrate is significantly dependent upon the ratio of NH₃∶InCl₃ used as source materials. Hall mobility decreases as the NH₃∶InCl₃ ratio is decreased, while the carrier concentration increases. This is explained in terms of the formation of nitrogen vacancies. A decrease of the NH₃∶InCl₃ ratio causes the increase of nitrogen defects in the InN film. This also increases the number of electrons being trapped by the defects, while their mobility is reduced because of the electrons being scattered at the vacancies.