Issue 20, 2002

Resonance-type effects in free radical electron spin–lattice relaxation and electron spin echo dephasing due to a dynamics of a homogeneous-chain oligomeric system

Abstract

Electron spin–lattice relaxation and phase relaxation were measured by the electron spin echo (ESE) method in the temperature range 4.2–300 K for radicals appearing during the polycondensation reaction of poly(4-hydrazo-diphenylene disulfide) oligomers with N-methyl-2-pyrrolidone chain ends. The spin–lattice relaxation rate 1/T1 is governed by cross-relaxation to the fast relaxing radical pairs, with the relaxation rate rapidly increasing at low temperature and showing unusually weakly temperature dependent behaviour above 25 K. At 146 K the resonance peak from rotating CH3 groups (τ0 = 1.07 × 10−12 s, Ea = 441 cm−1) appears. Such a resonance-type enhancement has been not observed so far in electron spin–lattice relaxation in solid-state materials. The ESE dephasing rate 1/TM is temperature dependent with a pseudo-resonance minimum at about 100 K resulting from two different dephasing mechanisms. At low temperatures the dephasing rate decreases on heating due to quantum tunnelling motion of CH3 groups between nearly equivalent potential wells. Above 100 K the rate continuously increases with temperature as a result of thermally activated low frequency motions between shallow potential minima (τ0 = 2.6 × 10−7 s, Ea = 49 cm−1). Various processes leading to temperature variations of the dephasing rate are reviewed and discussed. The relaxation results are compared with those for radicals spontaneously occurring in partially cured phenol-formaldehyde resin.

Article information

Article type
Paper
Submitted
12 Apr 2002
Accepted
13 Aug 2002
First published
17 Sep 2002

Phys. Chem. Chem. Phys., 2002,4, 4944-4951

Resonance-type effects in free radical electron spin–lattice relaxation and electron spin echo dephasing due to a dynamics of a homogeneous-chain oligomeric system

S. K. Hoffmann, W. Hilczer, J. Goslar, S. Kiczka and I. Polus, Phys. Chem. Chem. Phys., 2002, 4, 4944 DOI: 10.1039/B203560J

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