Issue 9, 2001
From the journal:

Journal of Materials Chemistry

Jin-Ho Park,a   Graeme A. Horley,†a   Paul O'Brien,‡*a   Anthony C. Jonesb  and  Majid Motevallic  

* Corresponding authors

a Department of Chemistry, Imperial College of Science, Technology and Medicine, South Kensington, London, UK
E-mail: paul.obrien@man.ac.uk
Fax: +44-161-275-4616
Tel: +44-161-275-4652

b Epichem Ltd, Power Road, Bromborough, Wirral, UK

c Department of Chemistry, Queen Mary and Westfield College, Mile End Road, London, UK

Abstract

Crystalline dimethyl(pentane-2,4-dionato)indium(III), [Me2In(acac)]2, has been prepared by the reaction of dimethylindium methoxide and pentane-2,4-dione in toluene. An X-ray structure determination shows that in the solid state, the complex is dimeric. [Me2In(acac)]2 has been used as a single-source precursor for the deposition of cubic In2O3 thin films by low pressure metal–organic chemical vapour deposition (LP-MOCVD) at temperatures ranging from 350 to 450 °C, on borosilicate glass, Si(100) and GaAs(111) substrates. All the as-deposited indium oxide films are single phase, cubic-In2O3.

Graphical abstract: The X-ray single crystal structure of [Me2In(acac)]2 and its use as a single-source precursor for the deposition of indium oxide thin films

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Article information

DOI
https://doi.org/10.1039/B102212L
Article type
Paper
Submitted
08 Mar 2001
Accepted
30 May 2001
First published
02 Aug 2001

J. Mater. Chem., 2001,11, 2346-2349

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The X-ray single crystal structure of [Me2In(acac)]2 and its use as a single-source precursor for the deposition of indium oxide thin films

J. Park, G. A. Horley, P. O'Brien, A. C. Jones and M. Motevalli, J. Mater. Chem., 2001, 11, 2346 DOI: 10.1039/B102212L

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