Preparation of thin copper films from the vapour phase of volatile copper(I) and copper(II) derivatives by the CVD method

Abstract

The main chemical aspects of the preparation of thin copper films from the vapour of monovalent and divalent copper derivatives as precursors in the CVD technique are considered. Data on the methods of synthesis and the properties of various types of these compounds are generalised and described systematically. The possible decomposition mechanisms of copper compounds under CVD conditions are discussed. The prospects of using the CVD technology for the preparation of thin copper films in integrated circuits of microelectronic devices are outlined. The bibliography includes 432 references.