Abstract

Fluorine-doped indium oxide films are of interest as a transparent conducting material. Polycrystalline indium oxide films were deposited at 400–550 °C in a low-pressure chemical vapor deposition process from In[OCMe(CF₃)₂]₃(H₂N-t-Bu) and O₂ precursors. The films deposited at ≤500 °C contained 2–3 atom% fluorine while the film deposited at 550 °C had no detectable fluorine incorporation (by X-ray photoelectron spectroscopy with sputtering). Films deposited on quartz (≈1800 Å thickness) showed >85% transmittance in the 400–800 nm region and had band gaps of 3.65–3.75 eV. Resistivities of 1.25 × 10⁻²–9.96 × 10⁻³ Ω cm were measured for the as-deposited films. The resistivities of films grown on silicon decreased markedly after annealing to values as low as 1.43 × 10⁻³ Ω cm.