Abstract

Polycrystalline CoSn alloy thin films have been successfully prepared by low-pressure chemical vapor deposition from two single-source organometallic precursors containing Co–Sn bonds, Me₃SnCo(CO)₄ at 250–300 °C and Ph₃SnCo(CO)₄ at 300–400 °C. Deposition rates were 250–660 Å min⁻¹. Deposited films were characterized by scanning electron microscopic, energy dispersive spectroscopic, atomic absorption spectroscopic, X-ray diffraction, and Auger electron spectroscopic analyses. Co and Sn elements are evenly distributed in the films. The films are composed of the CoSn phase with a minor constituent of α-Co₃Sn₂.