Growth of a high quality ZnO film on sapphire by atmospheric pressure halide vapor phase epitaxy using ZnO buffer layers

Kazuhiko Kaiya; Kouji Omichi; Naoyuki Takahashi; Takato Nakamura; Shinji Okamoto; Hajime Yamamoto

doi:10.1039/A909584E

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Kazuhiko Kaiya,^a Kouji Omichi,^a Naoyuki Takahashi,*^a Takato Nakamura,^a Shinji Okamoto †^b and Hajime Yamamoto^c

Author affiliations

* Corresponding authors

^a Department of Materials Science and Technology, Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Japan
E-mail: takanao@mat.eng.shizuoka.ac.jp

^b Department of Electrical and Electronic Engineering, Faculty of Engineering, Tottori University, Koyama, Tottori, Japan

^c Department of Engineering, Tokyo University of Technology, 1404, Katakura, Hachioji, Tokyo, Japan

Abstract

Hexagonal ZnO films have been grown on a sapphire(0001) substrate by atmospheric pressure halide vapor phase epitaxy using ZnO buffer layers. The full width at half maximum of the X-ray (0002) diffraction peak for the ZnO films with the buffer layer was found to be smaller than that of the ZnO films without the buffer layer. Reflection high-energy electron diffraction measurements of the former revealed a diffraction pattern similar to that of a single crystal. The photoluminescence spectra showed a strong peak at 370 nm up to 180 K.

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Article information

DOI: https://doi.org/10.1039/A909584E
Article type: Paper
Submitted: 06 Dec 1999
Accepted: 21 Jan 2000
First published: 21 Feb 2000

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J. Mater. Chem., 2000,10, 969-972

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