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Issue 4, 1998
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Chemically modified field effect transistors with nitrite or fluoride selectivity

Abstract

Polysiloxanes with different types of polar substituents are excellent membrane materials for nitrite and fluoride selective chemically modified field effect transistors (CHEMFETs). Nitrite selectivity has been introduced by incorporation of a cobalt porphyrin into the membrane; fluoride selectivity has been obtained with a uranyl salophen derivative as the anion receptor. Polysiloxanes with acetylphenoxypropyl or phenylsulfonylpropyl substituents are the best sensing membranes. The nitrite selective CHEMFETs exhibit Nernstian responses and a high selectivity over chloride and bromide (log K PotNO2, j = –2.9 and –2.7 respectively, based on a phenylsulfonylpropyl functionalized polysiloxane). Also the sensitivity and selectivity of the fluoride selective CHEMFETs is better with the polysiloxane membranes than with plasticized PVC membranes. Even in the presence of 0.1 M of the more lipophilic chloride, bromide, or nitrate ions an almost Nernstian response and a detection limit of 0.25 mM is obtained for fluoride (log KF, j Pot = –2.5).

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Article type: Paper
DOI: 10.1039/A709076E
Citation: J. Chem. Soc., Perkin Trans. 2, 1998,0, 773-778
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    Chemically modified field effect transistors with nitrite or fluoride selectivity

    M. M. G. Antonisse, B. H. M. Snellink-Ruël, J. F. J. Engbersen and D. N. Reinhoudt, J. Chem. Soc., Perkin Trans. 2, 1998, 0, 773
    DOI: 10.1039/A709076E

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