Effect of doping metals on the kinetics of interaction of SnO2 thin films with oxygen

Abstract

The effect of changing the doping metal (M=Cu, Ni, Pd, Pt) on the kinetics of oxygen exchange reactions of polycrystalline SnO₂ thin films with gaseous oxygen was studied in situ by conductance measurements. It was found that preliminary annealing of SnO₂-based materials in inert (N₂) and active (100 ppm H₂S in N₂) atmospheres affects the kinetics of their reaction with oxygen. Two kinetic models describing the interactions of semiconducting porous materials with gases, i.e., diffusion and surface chemical reactions, are considered.