Issue 9, 1997

Growth of crystalline doped β-alumina thin films by laser ablation

Abstract

Crystalline thin films of sodium β-alumina and β-aluminogallate for optical applications have been deposited onto various single-crystal substrates by the pulsed laser deposition technique. Films with a smooth surface morphology were obtained by using Cr-doped targets. Despite Na loss in the films with respect to the target composition, the β-alumina crystalline phase was grown at elevated temperature (700–800 °C), and highly textured (00l) films were obtained, whatever the substrates: MgO, ZrO 2 , Al 2 O 3 or Si. The optical properties were studied by measuring the refractive index of the films and performing the emission spectrum of the Cr 3+ ions, providing results very similar to those of the bulk single-crystalline material.

Article information

Article type
Paper

J. Mater. Chem., 1997,7, 1763-1767

Growth of crystalline doped β-alumina thin films by laser ablation

P. Haumesser, J. Théry, P. Daniel, A. Laurent, J. Perrière, R. Roman and R. Perez-Casero, J. Mater. Chem., 1997, 7, 1763 DOI: 10.1039/A608581D

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