Issue 5, 1997

Zn K-edge EXAFS study of SILAR-grown zinc sulfide thin films

Abstract

Zinc sulfide thin films grown by the successive ionic layer adsorption and reaction (SILAR) method have been characterized by extended X-ray absorption fine structure (EXAFS) measurements. The ZnS films were well crystallized even as-grown but annealing improved the crystallinity clearly. The films contained small amounts of oxygen and, according to the EXAFS results, oxygen in the SILAR-grown zinc sulfide thin films occurred as hydroxide ions both in the as-grown and in the annealed samples. The simulated radial distribution curves for two models, Zn(OH) 2 /ZnS and ZnO/ZnS, were calculated to analyse the film composition. The ZnS thin films were also characterized by IR and electron spectroscopy for chemical analysis (ESCA) measurements.

Article information

Article type
Paper

J. Mater. Chem., 1997,7, 741-745

Zn K-edge EXAFS study of SILAR-grown zinc sulfide thin films

S. Lindroos, Y. Charreire, T. Kannianinen, M. Leskelä and S. Benazeth, J. Mater. Chem., 1997, 7, 741 DOI: 10.1039/A608383H

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