Chemical vapour deposition of tantalum silicide thin films from difluorosilylene and tantalum halides

Abstract

Thin films of TaSi_x, have been grown on Si( 111), SiO₂ and graphite by LPCVD using SiF₂ and TaX₅(X = F, Cl) as the precursors. Thin films prepared at 190–300 °C contained polycrystalline TaSi₂; 190 °C is the lowest temperature reported for the CVD preparation of TaSi₂. The compositions of the thin films were found to be 50% TaSi₂ and 50% amorphous silicon (a-Si).