A review of recent development in the deposition of II–VI and III–VI compound semiconductors by MOCVD methods using single-compound precursors is presented. The use of such precursors is placed in the context of the potential technological importance of these materials and relevant aspects of conventional MOCVD.
P. O'Brien and R. Nomura, J. Mater. Chem., 1995, 5, 1761 DOI: 10.1039/JM9950501761
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