First volatile alkylgallyl manganese complexes; structure of [(CO5)Mn]2Ga[(CH2)3NMe2]. Molecular control of the stoichiometry of Mn–Ga thin films grown by low-pressure MOCVD
Abstract
The Mn–Ga complexes of the general formula {L(CO)4Mn}a[GaR3–a(Do)](L = CO, R = alkyl; Do =N-Lewis-donor) are obtained in yields 90% and used as volatile single source precursors for the gas-phase deposition of thin Mn–Ga alloy films.