Irregularities in the structure of planar solid state ion selective devices were observed. The structural defects were due to ion migration and the battery effect occurring during high temperature thick-film processing. The irregularities were investigates and are reported here.
P. C. Brehier and R. E. Belford, Anal. Proc., 1995, 32, 327 DOI: 10.1039/AI9953200327
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