The sparingly soluble material (the passivating layer) formed during chemomechanical polishing of silica wafers by [HF2]––cerium(IV) oxide–sucrose mixtures at low pH has been identified as K2SiF6 coated with a thin silica layer.
D. S. Boyle, J. A. Chudek, G. Hunter, D. James, M. I. Littlewood, L. McGhee, M. I. Robertson and J. M. Winfield, J. Mater. Chem., 1993, 3, 903 DOI: 10.1039/JM9930300903
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