Vapour-pressure data for adducts of dimethylzinc: sources and dopants for zinc in metal–organic chemical vapour deposition

Abstract

Sigma-bonded adducts of dimethylzinc with nitrogen-containing ligands are finding increasing application as precursors for the growth of zinc chalcogenides by metal–organic chemical vapour deposition (MOCVD) and as p-dopants for III–V materials. This paper describes the synthesis and characterization of several adducts of dimethylzinc and a related internally chelated complex. These compounds are all useful, or potentially so, for MOCVD. Detailed vapour-pressure measurements are reported.