Issue 4, 1993

4-Methyl-1,2,3-selenadiazole: a liquid selenium source for the low-temperature chemical vapour deposition of selenium-containing materials

Abstract

The use of 4-methyl-1,2,3-selenadiazole as a precursor for the chemical vapour deposition of selenium-containing materials has been investigated. The results indicate that this is a useful precursor for the low-temperature plasma-assisted chemical vapour deposition of selenium, with a growth rate of 500 Å min–1 being achieved with a substrate temperature of 40 °C and a plasma power density of 1 W cm–2.

Article information

Article type
Paper

J. Mater. Chem., 1993,3, 429-430

4-Methyl-1,2,3-selenadiazole: a liquid selenium source for the low-temperature chemical vapour deposition of selenium-containing materials

A. D. Jackson, P. A. Jones, P. D. Lickiss and R. D. Pilkington, J. Mater. Chem., 1993, 3, 429 DOI: 10.1039/JM9930300429

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Spotlight

Advertisements