Materials with layered structures. Part 6.—-MnGaInS4, Crystal Structure and Phase Width in the System MnS–Ga2S3–In2S3

Abstract

The crystal structure of MnGalnS₄ has been determined from single-crystal X-ray diffraction data and refined to R = 0.029 (R_w= 0.033). It crystallizes rhombohedrally in the Znln₂S₄(IIIa)-type (space group R3m). Manganese and indium are distributed nearly statistically over the octahedral sites and one tetrahedral site. The second tetrahedral site is occupied by gallium. In the quasiternary system MnS–Ga₂S₃–In₂S₃, MnGaInS₄ exhibits a large region of homogeneity with regard to the ratio Ga : In as well as to the ratio Mn : (Ga + In).