A scanning laser microscope has been used to study the photoelectrochemical etching of n-GaAs at the electrolyte interface. Results are presented that show directly, in a qualitative way, the distribution of interfacial charge transfer in the vicinity of microscopic surface defects and the effect of potential and electrolyte composition on this distribution.
R. Peat, A. R. Kucernak and D. E. Williams, Faraday Discuss., 1992, 94, 369 DOI: 10.1039/FD9929400369
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